b c d e d cathode mark top view bottom view side view f a features n low series resistance : 1.7 w n low capacitance : 50 ff n fast switching speed : 20 ns n silicon nitride passivation n polyimid e scratch protection n designed for automated pick and place insertion n rugged by design description m/a - com?s ma4fcp series consi sts of silicon flip chip pin diodes fabricated with m/a - com?s patented hmic process. this diode is fabricated on epitaxial wafe rs using a process designed for repeatable electrical characteristics and extremely low parasitics. this diode is fully passiva ted with silicon nitride and has an additional layer of polyimide for scratch protection. these protective coatings prevent dam age to the junction during automated or manual handling. this flip chip configuration is suitable for pick and place insertion. applications the small 0315 outline and low 0.085 ps rc product, make the device useful for multi - throw switch and switched pha se shifter circuits requiring < 20 ns switching speeds up to 18 ghz operating frequency. silicon flip chip pin diode MA4FCP305 v 3.00 1269 outline drawing parameter value forward current 100 ma reverse voltage - 40 v operating temperature - 55 c to +1 50 c storage temperature - 55 c to +1 50 c dissipated power 230 mw mounting temperature + 300 c for 10 seconds absolute maximum ratings @ 25 c 1 1. exceeding any of these values may result in permanent damage nominal die dimensions dim inches millimeters min max min max a 0.0269 0.0289 0.683 0.733 b 0.0135 0.0155 0.343 0.393 c 0.0040 0.0080 0.102 0.203 d 0.0041 0.0061 0.105 0.155 e 0.0124 0.0144 0.315 0.365 f 0.0069 0.0089 0.175 0.225
silicon flip chip pin diode MA4FCP305 v 3.00 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 2 1. total capacitance is equivalent to the sum of junction capacitance cj and parasitic capacitance, cp. 2. series resistance r s is equivalent to the total diode series resistance including the junction resistance rj. 3. rs and cp measured on an hp4291a with die mounted in an ods - 186 package. 4. steady - state thermal resistance measured with die mounted in an ods - 186 package. electrical specifications @ t a = + 25 c parameters @ conditions symbol units min. typ. max. total capacitance @ - 10 v, 1 mhz 1 c t pf 0.060 total capacitance @ - 10 v, 1 g hz 1,3 c t pf 0.050 series resistance @ +50 ma 2,3 , 100 mhz r s w 1.7 series resistance @ +50 ma 2,3 , 1 ghz r s w 2.1 forward voltage @ +100 ma v f v 1.05 1.25 reverse voltage @ - 10 m a v r v - 40 - 50 reverse current @ - 40 v i r m a 10 50 - 90% lifetime @ +10 ma / - 6 ma tl ns 25 steady state thermal resistance 4 q c/w 640 mounting techniques these devices were designed for insertion onto hard or soft substrates with the junction side down. they ca n be mounted with electrically conductive epoxy or with a low temperature solder preform. the die can also be assembled with th e junction side up, and wire or ribbon bonds made to the pads. solder die attach using electrically conductive ag epoxy and s older these chips are designed to be inserted onto hard or soft substrates with the junction side down. they should be mounted onto silkscreened circuits using electrically conductive ag epoxy, approximately 1 - 2 mils in thickness and cured at approximately 90 c to 150 c per manufacturer?s schedule . for extended cure times >30 minutes, temperatures must be below 2 00 c. sn rich solders are not recommended due to the tungsten metallization scheme beneath the gold contacts. indalloy or 80 au/20 sn solders are acceptable. maximum soldering temperature must be <300 c for <10 sec. assembly considerations the following precautions should be observed for successful assembly of the die. cleanliness these chi ps should be handled in a clean environment. do not attempt to clean die after installation. esd these devices very susceptibl e to esd and are rated class 0 (0 - 199 v) per hbm mil - std - 883, method 3015.7 [c = 100 pf 10%, r = 1.5k w 1%]. even though tes ted die pass 100 v esd, they must be handled in a static - free environment general handling the protective polymer coating on the active areas of these devices provides scratch protection, particularly for the metal airbridge that contacts the anode. di e can be handled with tweezers or vacuum pickups and are suitable for use with automatic pick - and - place equipment.
silicon flip chip pin diode MA4FCP305 v 3.00 m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without not ice. visit www.macom.com for additional data sheets and product information. n north america: tel. (800) 366 - 2266 n asia/pacific: tel.+ 81 - 44 - 844 - 8296 , fax + 81 - 44 - 844 - 8298 n europe: tel. +44 (1344) 869 595, fax+44 (1344) 300 020 4 circuit mounting dimensions (inches) ordering info r mation part number package MA4FCP305 die in carrier madp00716101269 tape/reel MA4FCP305- w wafer on frame 0.012 (2) pl 0.013 0.008 (2) pl
|
